CMP is a service organization in ICs and MEMS for prototyping and low volume productions.
- CMP provides several regular and advanced CMOS technologies. BiCMOS RF, High voltage and Smart power are among our Specialty technology portfolio.
- CMP provides two types of MEMS technologies for prototyping: Integrated bulk micromachining technologies and specific surface micromachining technologies.
Since 1981, 614 customers from 70 countries have been served, more than 7900 projects have been prototyped through 1043 runs and 72 different technologies have been interfaced.
Some history data are available on this link
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STMicroelectronics Advanced CMOS FDSOI technology with 8 metal layers
STMicroelectronics BiCMOS SiGe technology with 8 metal layers
STMicroelectronics Advanced CMOS technology with 7 metal layers
STMicroelectronics BiCMOS SiGe technology with 6 metal layers
STMicroelectronics Advanced CMOS SOI technology with 4 metal layers
STMicroelectronics BCD High Voltage technology with 4 metal layers
STMicroelectronics CMOS technology with 6 metal layers
STMicroelectronics BCD SOI High Voltage technology with 4 metal layers
STMicroelectronics CMOS High Voltage technology with 4 metal layers
ams CMOS technology with 6 metal layers, for Power management applications MEMS and Sensor
ams CMOS technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip
ams CMOS High Voltage technology with 6 metal layers, for Mixed signal analog digital, HV designs, system on chip
ams CMOS Opto ARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded
ams CMOS Opto BARC technology with 4 metal layers, for Provides enhanced optical sensitivity for embedded
ams CMOS RF technology with 4 metal layers, for Mixed signal analog digital, large digital designs, system on chip, RF.
ams CMOS technology with 4 metal layers, for The process is fully compatible with C35B4C3 Mixed signal analog digital
ams CMOS High Voltage technology with 4 metal layers, for Mixed signal analog digital, HV designs, system on chip
MEMSCAP MEMS MUMPS, for MEMS, micromechanics, MOEMS.
ams BiCMOS SiGe technology with 4 metal layers, for Mixed signal analog/RF/digital, large digital designs, system on chip
MEMSCAP MEMS MUMPS, for MEMS, micromechanics, MOEMS
ams CMOS BS Bulk Micromachining technology with 4 metal layers
IRT Nanoelec/LETI-CEA Wafer-level packaging, for 3D/2.5D integration
ams CMOS FS Bulk Micromachining technology with 4 metal layers, for MEMS, micromechanics, MOEMS.
TELEDYNE DALSA MEMS, for Accelerometers Gyroscopes Resonators Inertial sensor combos (Sensor fusion)
IRT Nanoelec/LETI-CEA Wafer-level packaging, for 3D/2.5D integration
IRT Nanoelec/LETI-CEA Wafer-level packaging Flip-Chip Packaging, for Single die flip-chip, 3D/2.5D integration
IRT Nanoelec/LETI-CEA Si-Photonics technology with 2 metal layers, for Telecom, DataCom, ComputerCom
ams Si-Interposer technology with 4 metal layers, for Passive Silicon Si-Interposer for 3D/2.5D integration
ams Flip-Chip Packaging, for Single die flip-chip packaging
IRT Nanoelec/LETI-CEA Wafer-level packaging, for 3D/2.5D integration
IRT Nanoelec/LETI-CEA Flip-Chip Packaging, for Single die flip-chip packaging
IRT Nanoelec/LETI-CEA CMOS NVM, for Storage Class memory, Embedded memory, Neuromorphic, Computing, Artificial Intelligence accelerator.
IRT Nanoelec/LETI-CEA Flip-Chip Packaging, for 3D/2.5D integration
IRT Nanoelec/LETI-CEA Flip-Chip Packaging Wafer-level packaging, for Flip-chip packaging
ams Si-Interposer technology with 4 metal layers, for Active Silicon Si-Interposer for 3D/2.5D integration
